Design, Development and Fabrication of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based terahertz devices for Space Applications

a
Submitted by webmaster on
Department
Physics
Category
Ph.D Thesis
Abstract
SC16D050_1.pdf
Document
SC16D050FT.pdf
Date
2023
Student/Scholar Details
Rakeshkumar Kaneriya
Event Details

Select a date to view events.